Influence of Temperature on the Degree of Modification of Wood with Organosilicon Compounds

The search for optimal parameters for modifying wood materials with organosilicon compounds is a very urgent task. In the work, the authors investigated the effect of temperature on the efficiency of this process by determining the percentage of silicon in the substrate after modifying native and phosphorylated wood with various classes of organosilicon compounds and establishing the corresponding dependencies. 10% solutions of organosilicon compounds (CBS) were studied as modifiers: polyethylhydridsiloxane (PEGS), tetraethoxysilane (TES), sodium polymethylsilicate (PMSN). Sawdust of sapwood pine and phosphorylated sawdust of sapwood pine were used as a substrate. As a result of the conducted one-factor analysis of variance, the influence of the CBS treatment temperature on the silicon content in wood in wt. was established. % at a fixed modification time. Of the three studied organosilicon surface modifiers, only PEGS shows a stable relationship between the temperature of modification of native and phosphorylated wood and the degree of modification of the substrate, expressed as the percentage of silicon in the wood composite after long-term extraction. TES apparently does not enter into a chemical interaction with either native or phosphorylated wood due to the absence of functional groups in its composition (temperature in this case has no effect). When using native and phosphorylated PMSN wood as a modifier, it was not possible to establish a relationship between the modification temperature and the silicon content in the modified substrate.

I.V. STEPINA, Candidate of Sciences (Engineering) (This email address is being protected from spambots. You need JavaScript enabled to view it.);
Yu.G. ZHEGLOVA, Candidate of Sciences (Engineering) (This email address is being protected from spambots. You need JavaScript enabled to view it.)

National Research Moscow State University of Civil Engineering (26, Yaroslavskoe Highway, Moscow, 129337, Russian Federation)

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